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Van Hove singularities as a result of quantum confinement: The origin of intriguing physical properties in Pb thin films

Sun, Yu Jie and Souma, S. and Li, Wen Juan and Sato, T. and Zhu, Xie Gang and Wang, Guang and Chen, Xi and Ma, Xu Cun and Xue, Qi Kun and Jia, Jin Feng and Takahashi, T. and Sakurai, T. (2010) Van Hove singularities as a result of quantum confinement: The origin of intriguing physical properties in Pb thin films. Nano Research, 3 (11). pp. 800-806.

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Official URL: http://www.springerlink.com/content/135484215n2737...

Abstract

In situ angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS) have been used to study the electronic structure of Pb thin films grown on a Si(111) substrates. The experiments reveal that the electronic structure near the Fermi energy is dominated by a set of m-shaped subbands because of strong quantum confinement in the films, and the tops of the m-shaped subbands form an intriguing ring-like Van Hove singularity. Combined with theoretical calculations, we show that it is the Van Hove singularity that leads to an extremely high density of states near the Fermi energy and the recently reported strong oscillations (with a period of two monolayers) in various properties of Pb films.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:9900
Deposited By:JNCASR
Deposited On:19 Nov 2010 11:13
Last Modified:19 Nov 2010 11:13

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