Kim, Ilsoo and Lee, Ki-Young and Kim, Ungkil and Park, Yong-Hee and Park, Tae-Eon and Choi, Heon-Jin (2010) Fabrication of Coaxial Si1a xGex Heterostructure Nanowires by O2 Flow-Induced Bifurcate Reactions. Nanoscale Research Letters, 5 (10). pp. 1535-1539.
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We report on bifurcate reactions on the surface of well-aligned Si1-xGex nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si1-xGex nanowires were grown in a chemical vapor transport process using SiCl4 gas and Ge powder as a source. After the growth of nanowires, SiCl4 ﬂow was terminated while O2 gas ﬂow was introduced under vac-uum. On the surface of nanowires was deposited Ge by the vapor from the Ge powder or oxidized into SiO2 by the O2 gas. The transition from deposition to oxidation occurred abruptly at 2 torr of O2 pressure without any intermediate region and enables selectively fabricated Ge/Si1-xGex or SiO2/Si1-xGex coaxial heterostructure nanowires. The rate of deposition and oxidation was dominated by interfacial reaction and diffusion of oxygen through the oxide layer, respectively.
|Subjects:||Material Science > Nanochemistry|
|Deposited On:||14 Jan 2011 06:53|
|Last Modified:||14 Jan 2011 06:53|
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