Nano Archive

Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

Bietti, S. and Somaschini, C. and Sarti, E. and Koguchi, N. and Sanguinetti, S. and Isella, G. and Chrastina, D. and Fedorov, A. (2010) Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy. Nanoscale Research Letters, 5 (10). pp. 1650-1653.

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Abstract

We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
ID Code:9856
Deposited By:CSMNT
Deposited On:31 Dec 2010 02:44
Last Modified:31 Dec 2010 02:44

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