Jang, Moongyu and Park, Youngsam and Jun, Myungsim and Hyun, Younghoon and Choi, Sung-Jin and Zyung, Taehyoung (2010) The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process. Nanoscale Research Letters, 5 (10). pp. 1654-1657.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor (CMOS) compatible process. The electrical conductivities of n-/p-leg nanowires are extracted with the variation of width. Using this structure, Seebeck coefficients are measured. The obtained maximum Seebeck coefficient values are 122 μV/K for p-leg and −94 μV/K for n-leg. The maximum attainable power factor is 0.74 mW/m K2 at room temperature.
|Subjects:||Material Science > Nanofabrication processes and tools|
|Deposited On:||31 Dec 2010 02:53|
|Last Modified:||31 Dec 2010 02:53|
Repository Staff Only: item control page