Jang, Moongyu and Park, Youngsam and Jun, Myungsim and Hyun, Younghoon and Choi, Sung-Jin and Zyung, Taehyoung (2010) The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process. Nanoscale Research Letters, 5 (10). pp. 1654-1657.
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Abstract
Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor (CMOS) compatible process. The electrical conductivities of n-/p-leg nanowires are extracted with the variation of width. Using this structure, Seebeck coefficients are measured. The obtained maximum Seebeck coefficient values are 122 μV/K for p-leg and −94 μV/K for n-leg. The maximum attainable power factor is 0.74 mW/m K2 at room temperature.
| Item Type: | Article |
|---|---|
| Subjects: | Material Science > Nanofabrication processes and tools |
| ID Code: | 9855 |
| Deposited By: | CSMNT |
| Deposited On: | 31 Dec 2010 02:53 |
| Last Modified: | 31 Dec 2010 02:53 |
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