Choi, Chang-Young and Lee, Ji-Hoon and Koh, Jung-Hyuk and Ha, Jae-Geun and Koo, Sang-Mo and Kim, Sangsig (2010) High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors. Nanoscale Research Letters, 5 (11). pp. 1795-1799.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150A degrees C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (-5.2 x 10(-6)).
|Subjects:||Material Science > Nanochemistry|
|Deposited On:||14 Jan 2011 07:51|
|Last Modified:||14 Jan 2011 07:51|
Repository Staff Only: item control page