Lin, Linhan and Guo, Siping and Sun, Xianzhong and Feng, Jiayou and Wang, Yan (2010) Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays. Nanoscale Research Letters, 5 (11). pp. 1822-1828.
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Herein, we prepare vertical and single crystal-line porous silicon nanowires (SiNWs) via a two-step metal-assisted electroless etching method. The porosity of the nanowires is restricted by etchant concentration, etching time and doping lever of the silicon wafer. The diffusion of silver ions could lead to the nucleation of silver nanoparti-cles on the nanowires and open new etching ways. Like porous silicon (PS), these porous nanowires also show excellent photoluminescence (PL) properties. The PL intensity increases with porosity, with an enhancement of about 100 times observed in our condition experiments. A ‘‘red-shift’’ of the PL peak is also found. Further studies prove that the PL spectrum should be decomposed into two elementary PL bands. The peak at 850 nm is the emission of the localized excitation in the nanoporous structure, while the 750-nmpeak should be attributed to the surface-oxidized nanostructure. It could be conﬁrmed from the Fourier
|Subjects:||Material Science > Nanochemistry|
|Deposited On:||06 Jun 2011 08:11|
|Last Modified:||06 Jun 2011 08:11|
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