Nano Archive

Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell

Di Bartolomeo, A. and Yang, Y. and Rinzan, M. B. M. and Boyd, A. K. and Barbara, P. (2010) Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell. Nanoscale Research Letters, 5 (11). pp. 1852-1855.

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We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO2/nanotube interface. We show that this type of memory device is robust, withstanding over 105 operating cycles, with a current drive capability up to 10-6 at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum.

Item Type:Article
Subjects:Material Science > Nanochemistry
ID Code:9821
Deposited By:CSMNT
Deposited On:06 Jun 2011 08:07
Last Modified:06 Jun 2011 08:07

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