Di Bartolomeo, A. and Yang, Y. and Rinzan, M. B. M. and Boyd, A. K. and Barbara, P. (2010) Record Endurance for Single-Walled Carbon NanotubeâBased Memory Cell. Nanoscale Research Letters, 5 (11). pp. 1852-1855.
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We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO2/nanotube interface. We show that this type of memory device is robust, withstanding over 105 operating cycles, with a current drive capability up to 10-6 at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We ﬁnd that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum.
|Subjects:||Material Science > Nanochemistry|
|Deposited On:||06 Jun 2011 08:07|
|Last Modified:||06 Jun 2011 08:07|
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