Nano Archive

Role of doping in carbon nanotube transistors with source/drain underlaps

Alam , K and Lake , R (2007) Role of doping in carbon nanotube transistors with source/drain underlaps. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 6 . 652 - 658 . ISSN 1536-125X

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Abstract

The effects of doping on the performance of coaxially gated carbon nanotube (CNT) field-effect transistors for both zero Schottky-barrier (SB) and doped carbon nanotube contacts are theoretically investigated. For ultrascaled CNTFETs in which the source/drain metal contacts lie 50 nm apart, there is no MOSFET-like contact CNTFET (C-CNTFET) with an acceptable on/off current ratio using a CNT of diameter >= 1.5 nm and a source/drain voltage >= 0.4 V. For CNTFETs with source/drain metal contacts either 50 nm or 100 nm apart, there is an optimal doping concentration of 10(-3) dopants per atom. The maximum on/off current ratios for the 50 nm CNT/5 nm gate and the 100 nm CNT/10 nm gate SB-CNTFETs are 5 x 10(4) and 6 x 10(5), respectively. Performance metrics of delay time, cutoff frequency, and LC frequency are presented and compared.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:9806
Deposited By:JNCASR
Deposited On:10 Nov 2010 04:11
Last Modified:10 Nov 2010 04:11

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