Thian, Kok Yong and Chen, Hon Nee and Seong, Shan Yap and Wee, ong Siew and Sa, fran.G (2010) Pulsed laser deposition of nanostructured indium-tin-oxide film. Proceedings of the SPIE - The International Society for Optical Engineering . ISSN 0277-786X
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Effects of O2, N2, Ar and He on the formation of micro- and nanostructured indium tin oxide (ITO) thin films were investigated in pulsed Nd:YAG laser deposition on glass substrate. For O2 and Ar, ITO resistivity of ≤ 4 * 10-4 Omega cm and optical transmittance of > 90% were obtained with substrate temperature of 250 degrees C. For N2 and He, low ITO resisitivity could be obtained but with poor optical transmittance. SEM images show nano-structured ITO thin films for all gases, where dense, larger and highly oriented, microcrystalline structures were obtained for deposition in O2 and He, as revealed from the XRD lines. EDX results indicated the inclusion of Ar and N2 at the expense of reduced tin (Sn) content. When the ITO films were applied for fabrication of organic light emitting devices (OLED), only those deposited in Ar and O2 produced comparable performance to single-layer OLED fabricated on the commercial ITO.
|Uncontrolled Keywords:||pulsed laser deposition; nanostructured indium tin oxide thin films; microstructured indium tin oxide thin films; resistivity; optical transmittance; SEM; microcrystalline structure; XRD; EDX; inclusion; organic light emitting devices; OLED; temperature 250 degC; SiO2; ITO|
|Subjects:||Material Science > Nanostructured materials|
|Deposited On:||28 Oct 2010 10:09|
|Last Modified:||28 Oct 2010 10:09|
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