Seong, Shan Yap and Wee, Ong Siew and Ladam, C and Dahl, O and Reenaas, T.W. (2010) Nanosecond laser ablation and deposition of Ge films. Proceedings of the SPIE - The International Society for Optical Engineering . ISSN 0277-786X
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
In this work, nanosecond-pulsed from ultra-violet to infrared lasers: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were employed for ablation and deposition of germanium films in background pressure of <10-6 Torr. Deposition was carried out at room temperature on Si, GaAs, sapphire and glass. The as-deposited films, characterized by using scanning electron microscopy (SEM) and atomic force microscopy (AFM), consist of nano to micron-sized droplets on nanostructured film. The dependence of film properties on laser wavelengths and fluence are discussed.
|Uncontrolled Keywords:||nanosecond laser ablation; nanosecond laser deposition; as-deposited films; scanning electron microscopy; SEM; atomic force microscopy; AFM; nano-sized droplets; micron-sized droplets; laser wavelengths; laser fluence; time 5 ns; temperature 293 K to 298 K; wavelength 248 nm; wavelength 1064 nm; wavelength 532 nm; wavelength 355 nm; Ge; Si; GaAs; SiO2; Al2O3|
|Subjects:||Material Science > Nanostructured materials|
|Deposited On:||26 Oct 2010 14:26|
|Last Modified:||26 Oct 2010 14:26|
Repository Staff Only: item control page