Nano Archive

Dispersion and absorption of Alfven wave in ion-implanted group-IV semiconductor

Ghosh , S. and Sharma , G. and Salimullah , M. (2005) Dispersion and absorption of Alfven wave in ion-implanted group-IV semiconductor. PHYSICA B-CONDENSED MATTER, 355 (1-4). 37-43 . ISSN 0921-4526

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Abstract

By considering that the implanted ions in a group-IV semiconductor agglomerate to form nanoclusters (NCs) and some of them acquire negative charge, we present an analytical study on excitation and propagation of Alfven wave (AW). Using multi-fluid analysis and Maxwell's equations, a linear dispersion relation for the AW in a semiconductor plasma has been derived. The presence of charged NCs is shown to split the waves into two components and significantly modifying their dispersion and absorption characteristics by creating a charge imbalance in the semiconductor plasma. The NCs, on account of their heavy masses, are assumed to be stationary in the background. (C) 2004 Elsevier B.V. All rights reserved.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:9719
Deposited By:JNCASR
Deposited On:19 Oct 2010 09:45
Last Modified:19 Oct 2010 09:45

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