Ghosh , S. and Sharma , G. and Salimullah , M. (2005) Dispersion and absorption of Alfven wave in ion-implanted group-IV semiconductor. PHYSICA B-CONDENSED MATTER, 355 (1-4). 37 -43. ISSN 0921-4526
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By considering that the implanted ions in a group-IV semiconductor agglomerate to form nanoclusters (NCs) and some of them acquire negative charge, we present an analytical study on excitation and propagation of Alfven wave (AW). Using multi-fluid analysis and Maxwell's equations, a linear dispersion relation for the AW in a semiconductor plasma has been derived. The presence of charged NCs is shown to split the waves into two components and significantly modifying their dispersion and absorption characteristics by creating a charge imbalance in the semiconductor plasma. The NCs, on account of their heavy masses, are assumed to be stationary in the background.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||19 Oct 2010 06:53|
|Last Modified:||19 Oct 2010 06:53|
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