Ghosh , S. and Sharma , G. and Salimullah , M. (2005) Dispersion and absorption of Alfven wave in ion-implanted group-IV semiconductor. PHYSICA B-CONDENSED MATTER, 355 (1-4). 37 -43. ISSN 0921-4526
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Abstract
By considering that the implanted ions in a group-IV semiconductor agglomerate to form nanoclusters (NCs) and some of them acquire negative charge, we present an analytical study on excitation and propagation of Alfven wave (AW). Using multi-fluid analysis and Maxwell's equations, a linear dispersion relation for the AW in a semiconductor plasma has been derived. The presence of charged NCs is shown to split the waves into two components and significantly modifying their dispersion and absorption characteristics by creating a charge imbalance in the semiconductor plasma. The NCs, on account of their heavy masses, are assumed to be stationary in the background.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanophysics Physical Science > Nano objects Material Science > Nanochemistry Material Science > Nanostructured materials |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics Faculty of Engineering, Science and Mathematics > School of Chemistry |
| ID Code: | 9718 |
| Deposited By: | JNCASR |
| Deposited On: | 19 Oct 2010 06:53 |
| Last Modified: | 19 Oct 2010 06:53 |
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