Huda , M. Q. and Siddiqui , S. A. and Islam , M. S. (2001) Explaining the luminescence profile of erbium in silicon under short excitation pulses. SOLID STATE COMMUNICATIONS , 118 (5). pp. 235-239. ISSN 0038-1098
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A mechanism for the luminescence of erbium in silicon has been developed. Erbium atoms in silicon have been considered as recombination centers with specific values of capture and emission coefficients. Electron–hole recombination through these levels has been considered to be the origin of erbium excitation. Capture and emission processes of photo generated excess carriers in the erbium related level have been equated for non-steady-state conditions. The extended rise of erbium luminescence after termination of short excitation pulses of micro/nano second durations has been explained by the model.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||11 Oct 2010 09:34|
|Last Modified:||11 Oct 2010 09:34|
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