Nano Archive

Feasibility study of integrated vertical and lateral IMOS and TFET devices for nano-scale transistors

Divya, P. and Saad, I. (2010) Feasibility study of integrated vertical and lateral IMOS and TFET devices for nano-scale transistors. 2010 IEEE International Conference on Semiconductor Electronics (ICSE) .

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Abstract

A review on the integration of vertical impact ionization MOSFET (IMOS) with vertical tunnelling FET (TFET) has been presented in this paper. A comparison has been done on the lateral and vertical I-MOS and TFET device structures, highlighting the advantages and drawbacks of each device. Integration of I-MOS and TFET on a vertical scale is seen as one of the promising solutions, to continue the trend of scaling down the devices further, in the nanometer regime.

Item Type:Article
Uncontrolled Keywords:IMOS; TFET; nano-scale transistors; vertical impact ionization MOSFET; vertical tunnelling FET
Subjects:Physical Science > Nanoelectronics
Material Science > Nanostructured materials
ID Code:9655
Deposited By:CSMNT
Deposited On:25 Sep 2010 10:52
Last Modified:25 Sep 2010 10:52

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