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Characterization of Titanium Silicide (TiSi2) for Complementary Metal Oxide Semiconductor

Yee , Mon Thu and Khin , Maung Latt (2010) Characterization of Titanium Silicide (TiSi2) for Complementary Metal Oxide Semiconductor. AIP Conference Proceedings . ISSN 0094-243X

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TiSi2 has been one of the most crucial silicides for complementary metal oxide semiconductor device applications such as contacts to source/drain actives and gate regions due to its low resistivity and good thermal stability. However, the polymorphic transformation, (C49-TiSi2 ~60-70 μ ω cm → C54-TiSi2 ~5-20 μ ω cm), required for self-aligned silicide process has become difficult on narrow, ~0.25 mm and thin lines, known as fine-line width effect. In the present paper, Titanium thin films of thickness 100 nm are deposited on 6" (100) single crystal Si wafers by ionized metal plasma deposition method. Then samples are annealed at different temperatures under high vacuum condition to study the for C49-TiSi2 formation of TiSi. Transformation temperatures of C49 to C54 were studied using scanning electron microscopy (SEM), X-ray diffraction (XRD) and four point probe electrical method.

Item Type:Article
Subjects:Physical Science > Nanophysics
ID Code:9642
Deposited By:CSMNT
Deposited On:24 Sep 2010 12:38
Last Modified:24 Sep 2010 12:38

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