Nano Archive

Trench-template fabrication of indium and silicon nanowires prepared by thermal evaporation process

Kumar, Prashant (2010) Trench-template fabrication of indium and silicon nanowires prepared by thermal evaporation process. Journal of Nanoparticle Research, 12 (7). pp. 2473-2480.

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Abstract

In this study, we report on the trench-template assisted fabrication of nanowires for thermally evaporated indium and silicon thin films on quartz substrate. Length of the nanowires is completely dependent on the length of the trench, whereas the diameter of the nanowires is dependent on the thickness of the thin film. The diameter of nanowire increases from 200 nm to 1 μm when the thickness was increased from 15 to 60 nm. It is observed that nanowires diameter is invariably controlled by material deposition thickness. Average crystallite sizes for 60 nm indium and silicon deposition inside the trench are 120 and 35 nm, respectively. Nanowire surface plasmon peak shift as compared to the same thickness untemplated continuous thin film is more for thinner nanowires. This technique of nanowire fabrication is shown to be versatile in nature

Item Type:Article
Uncontrolled Keywords:Templated growth - Nanowires - Restricted vapour supply - Surface plasmon
Subjects:Material Science > Nanofabrication processes and tools
Material Science > Nanochemistry
ID Code:9575
Deposited By:Lesley Tobin
Deposited On:30 Aug 2010 13:45
Last Modified:30 Aug 2010 13:45

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