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Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)

Perova, T. S. and Wasyluk, J. and Kukushkin, S. A. and Osipov, A. V. and Feoktistov, N. A. and Grudinkin, S. A. (2010) Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111). Nanoscale Research Letters, 5 (9). pp. 1507-1511.

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Abstract

A series of 3C-SiC films have been grown by a novel method of solid–gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high crystalline quality, with a thickness of 20 nm up to few hundreds nanometers can be formed on a (111) Si wafer, with a simultaneous growth of voids in the silicon substrate under the SiC film. The presence of these voids has been confirmed by SEM and micro-Raman line-mapping experiments. A significant enhancement of the Raman signal was observed in SiC films grown above the voids, and the mechanisms responsible for this enhancement are discussed.

Item Type:Article
Uncontrolled Keywords:3C-SiC, Voids in SiC, Micro-Raman spectroscopy, Micro-Raman mapping
Subjects:Material Science > Nanostructured materials
ID Code:9529
Deposited By:SPI
Deposited On:21 Oct 2010 09:16
Last Modified:21 Oct 2010 09:16

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