Perova, T. S. and Wasyluk, J. and Kukushkin, S. A. and Osipov, A. V. and Feoktistov, N. A. and Grudinkin, S. A. (2010) Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111). Nanoscale Research Letters, 5 (9). pp. 1507-1511.
A series of 3C-SiC films have been grown by a novel method of solid–gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high crystalline quality, with a thickness of 20 nm up to few hundreds nanometers can be formed on a (111) Si wafer, with a simultaneous growth of voids in the silicon substrate under the SiC film. The presence of these voids has been confirmed by SEM and micro-Raman line-mapping experiments. A significant enhancement of the Raman signal was observed in SiC films grown above the voids, and the mechanisms responsible for this enhancement are discussed.
|Uncontrolled Keywords:||3C-SiC, Voids in SiC, Micro-Raman spectroscopy, Micro-Raman mapping|
|Subjects:||Material Science > Nanostructured materials|
|Deposited On:||21 Oct 2010 09:16|
|Last Modified:||21 Oct 2010 09:16|
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