Kumar, Dinesh and Srivastava, Sanjay K. and Singh, P. K. and Sood, K. N. and Singh, V. N. and Dilawar, Nita and Husain, M. (2010) Room temperature growth of wafer-scale silicon nanowire arrays and their Raman characteristics. Journal of Nanoparticle Research, 12 (6). pp. 2267-2276.
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We report a simple, inexpensive, and rapid process for large area growth of vertically aligned crystalline silicon nanowires (SiNWs) of diameter 40–200 nm and variable length directly on p-type (100) silicon substrate. The process is based on Ag-induced selective etching of silicon wafers wherein the growth of SiNWs was carried out using the aqueous HF solution containing Ag+ ions at room temperature in a Teflon vessel. Effect of etching time has been investigated to understand the evolution of SiNW arrays. It has been found that the length of SiNWs has a linear dependence on the etching time for small to moderate periods (0–2 h). However, etching rate decreases slowly for long etching times (>2 h). Scanning electron microscopy was used to study the morphology of the SiNW arrays. Structural and compositional analysis was carried out using Raman spectroscopy and high-resolution transmission electron microscopy equipped with energy dispersive X-ray spectroscopy. Orders of magnitude intensity enhancement along with a small downshift and broadening in the first-order Raman peak of SiNW arrays was observed in comparison to the bulk crystalline silicon.
|Uncontrolled Keywords:||Silicon nanowires - Electroless etching - Silver catalyst - Raman spectroscopy - High-rate synthesis|
|Subjects:||Physical Science > Nanoelectronics|
|Deposited On:||02 Aug 2010 15:14|
|Last Modified:||02 Aug 2010 15:14|
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