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Room temperature growth of wafer-scale silicon nanowire arrays and their Raman characteristics

Kumar, Dinesh and Srivastava, Sanjay K. and Singh, P. K. and Sood, K. N. and Singh, V. N. and Dilawar, Nita and Husain, M. (2010) Room temperature growth of wafer-scale silicon nanowire arrays and their Raman characteristics. Journal of Nanoparticle Research, 12 (6). pp. 2267-2276.

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We report a simple, inexpensive, and rapid process for large area growth of vertically aligned crystalline silicon nanowires (SiNWs) of diameter 40–200 nm and variable length directly on p-type (100) silicon substrate. The process is based on Ag-induced selective etching of silicon wafers wherein the growth of SiNWs was carried out using the aqueous HF solution containing Ag+ ions at room temperature in a Teflon vessel. Effect of etching time has been investigated to understand the evolution of SiNW arrays. It has been found that the length of SiNWs has a linear dependence on the etching time for small to moderate periods (0–2 h). However, etching rate decreases slowly for long etching times (>2 h). Scanning electron microscopy was used to study the morphology of the SiNW arrays. Structural and compositional analysis was carried out using Raman spectroscopy and high-resolution transmission electron microscopy equipped with energy dispersive X-ray spectroscopy. Orders of magnitude intensity enhancement along with a small downshift and broadening in the first-order Raman peak of SiNW arrays was observed in comparison to the bulk crystalline silicon.

Item Type:Article
Uncontrolled Keywords:Silicon nanowires - Electroless etching - Silver catalyst - Raman spectroscopy - High-rate synthesis
Subjects:Physical Science > Nanoelectronics
ID Code:9444
Deposited By:SPI
Deposited On:02 Aug 2010 15:14
Last Modified:02 Aug 2010 15:14

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