Cheze, Caroline and Geelhaar, Lutz and Brandt, Oliver and Weber, Walter M. and Riechert, Henning and Munch, Steffen and Rothemund, Ralph and Reitzenstein, Stephan and Forchel, Alfred and Kehagias, Thomas and Komninou, Philomela and Dimitrakopulos, George P. and Karakostas, Theodoros (2010) Direct comparison of catalyst-free and catalyst-induced GaN nanowires. Nano Research, 3 (7). pp. 528-536.
Official URL: http://www.springerlink.com/content/618823540863w0...
GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and V/III ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||27 Sep 2010 06:29|
|Last Modified:||27 Sep 2010 06:29|
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