Nano Archive

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

Cheze, Caroline and Geelhaar, Lutz and Brandt, Oliver and Weber, Walter M. and Riechert, Henning and Munch, Steffen and Rothemund, Ralph and Reitzenstein, Stephan and Forchel, Alfred and Kehagias, Thomas and Komninou, Philomela and Dimitrakopulos, George P. and Karakostas, Theodoros (2010) Direct comparison of catalyst-free and catalyst-induced GaN nanowires. Nano Research, 3 (7). pp. 528-536.

[img]
Preview
PDF
997Kb

Official URL: http://www.springerlink.com/content/618823540863w0...

Abstract

GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and V/III ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:9430
Deposited By:JNCASR
Deposited On:27 Sep 2010 06:29
Last Modified:27 Sep 2010 06:29

Repository Staff Only: item control page