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Field Emission of ITO-Coated Vertically Aligned Nanowire Array

Lee, Chang Hwa and Lee, Seok Woo and Lee, Seung S. (2010) Field Emission of ITO-Coated Vertically Aligned Nanowire Array. Nanoscale Research Letters, 5 (7). pp. 1128-1131.

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Official URL: http://www.ncbi.nlm.nih.gov/pmc/articles/PMC289422...

Abstract

An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:9376
Deposited By:JNCASR
Deposited On:27 Sep 2010 12:49
Last Modified:27 Sep 2010 12:49

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