Nano Archive

Electronic Structures of S-Doped Capped C-SWNT from First Principles Study

Wang, L. and Zhang, Y. Z. and Zhang, Y. F. and Chen, X. S. and Lu, W. (2010) Electronic Structures of S-Doped Capped C-SWNT from First Principles Study. NANOSCALE RESEARCH LETTERS, 5 (6). pp. 1027-1031. ISSN 1931-7573 (Print) 1556-276X (Online)

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Official URL: http://www.springerlink.com/content/26617q84u44635...

Abstract

The semiconducting single-walled carbon nanotube (C-SWNT) has been synthesized by S-doping, and they have extensive potential application in electronic devices. We investigated the electronic structures of S-doped capped (5, 5) C-SWNT with different doping position using first principles calculations. It is found that the electronic structures influence strongly on the workfunction without and with external electric field. It is considered that the extended wave functions at the sidewall of the tube favor for the emission properties. With the S-doping into the C-SWNT, the HOMO and LUMO charges distribution is mainly more localized at the sidewall of the tube and the presence of the unsaturated dangling bond, which are believed to enhance workfunction. When external electric field is applied, the coupled states with mixture of localized and extended states are presented at the cap, which provide the lower workfunction. In addition, the wave functions close to the cap have flowed to the cap as coupled states and to the sidewall of the tube mainly as extended states, which results in the larger workfunction. It is concluded that the S-doped C-SWNT is not incentive to be applied in field emitter fabrication. The results are also helpful to understand and interpret the application in other electronic devices.

Item Type:Article
Subjects:Physical Science > Nano objects
Physical Science > Nanoelectronics
ID Code:9278
Deposited By:M T V
Deposited On:03 Jun 2010 14:37
Last Modified:03 Jun 2010 14:37

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