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A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration

Zang, Ke Yan and Cheong, Davy W. C. and Liu, Hong Fei and Liu, Hong and Teng, Jing Hua and Chua, Soo Jin (2010) A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration. NANOSCALE RESEARCH LETTERS, 5 (6). pp. 1051-1056. ISSN 1931-7573 (Print) 1556-276X (Online)

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The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, III–V power devices and optical devices. We have developed a simple wet chemical etching method to release high-quality epitaxial III-nitride films from their substrates. This method builds on a nanoepitaxial lateral overgrowth (NELO) process that provides III-Nitride films with low dislocation densities. NELO is accomplished using a nanoporous mask layer patterned on GaN substrates. Chemical removal of the SiO2 layer after growth of III-Nitride overlayers causes fracture at the interface between the GaN film and the original GaN substrate, resulting in free-standing GaN films with nanostructured surfaces on one side. These layers can be transferred to other substrates, and the nano-structured surface can be used in photonic devices, or planarized for power devices.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nanoelectronics
ID Code:9271
Deposited By:M T V
Deposited On:03 Jun 2010 14:57
Last Modified:03 Jun 2010 14:57

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