Zang, Ke Yan and Cheong, Davy W. C. and Liu, Hong Fei and Liu, Hong and Teng, Jing Hua and Chua, Soo Jin (2010) A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration. NANOSCALE RESEARCH LETTERS, 5 (6). pp. 1051-1056. ISSN 1931-7573 (Print) 1556-276X (Online)
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Official URL: http://www.springerlink.com/content/q46241676u4337...
The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, IIIâV power devices and optical devices. We have developed a simple wet chemical etching method to release high-quality epitaxial III-nitride films from their substrates. This method builds on a nanoepitaxial lateral overgrowth (NELO) process that provides III-Nitride films with low dislocation densities. NELO is accomplished using a nanoporous mask layer patterned on GaN substrates. Chemical removal of the SiO2 layer after growth of III-Nitride overlayers causes fracture at the interface between the GaN film and the original GaN substrate, resulting in free-standing GaN films with nanostructured surfaces on one side. These layers can be transferred to other substrates, and the nano-structured surface can be used in photonic devices, or planarized for power devices.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nanoelectronics
|Deposited By:||M T V|
|Deposited On:||03 Jun 2010 14:57|
|Last Modified:||03 Jun 2010 14:57|
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