Nano Archive

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

Li, Zhenhua and Wu, Jiang and Wang, Zhiming M. and Fan, Dongsheng and Guo, Aqiang and Li, Shibing and Yu, Shui-Qing and Manasreh, Omar and Salamo, Gregory J. (2010) InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications. NANOSCALE RESEARCH LETTERS, 5 (6). pp. 1079-1084. ISSN 1931-7573 (Print) 1556-276X (Online)

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The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950 nm) with a full width at half maximum (FWHM) of 48 nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311) with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Physical Science > Nano objects
Physical Science > Nanoelectronics
Physical Science > Photonics
ID Code:9267
Deposited By:M T V
Deposited On:03 Jun 2010 15:07
Last Modified:03 Jun 2010 15:07

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