Nano Archive

Very High Q, NEMS Inductor for 12 GHz Wireless Sensor Applications

Khalid, N. and Singh, J. and Shah, K. and Devlin, J and Sauli, Z. (2010) Very High Q, NEMS Inductor for 12 GHz Wireless Sensor Applications. Proceedings of the Fifth IEEE International Workshop on Electronic Design, .

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Abstract

This paper presents the design and optimisation of high quality (Q) factor inductors using Micro/Nano Electro-Mechanical Systems (NEMS/MEMS) technology for 10 GHz to 20 GHz frequency band. Three inductors have been designed with rectangular, circular and symmetric topologies. Comparison has been made amongst the three to determine the best Q-factor. Inductors are designed on Silicon-on-Sapphire (SOS) because of its advantages including high resistivity and low parasitic capacitance. The effects of various parameters such as outer diameter (OD), the width of metal traces (W), the thickness of the metal (T) and the air gap (AG) on the Q-factor and inductance performances are thoroughly investigated. Results indicate that the symmetric inductor has highest Q-factor with peak Q of 192 at 12 GHz for a 1.13 nH.

Item Type:Article
Additional Information:Conference Paper
Uncontrolled Keywords:NEMS inductor; very high quality factor; wireless sensor applications; optimisation; microelectromechanical systems; nanoelectromechanical systems; NEMS/MEMS technology; rectangular topology; circular topology; symmetric topology; silicon-on-sapphire; frequency 10 GHz to 20 GHz
Subjects:Physical Science > Nanoelectronics
ID Code:9218
Deposited By:CSMNT
Deposited On:19 May 2010 04:02
Last Modified:19 May 2010 04:02

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