Singhal, Amit and Nagar, Sandeep and Gupta, Hari and Chandra, Ramesh (2010) Photoluminescence measurements in the phase transition region of Zn1-xCdxS films. Journal of Nanoparticle Research, 12 (4). pp. 1415-1421.
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Official URL: http://dx.doi.org/10.1007/s11051-009-9687-x
Thin films of Zn1âx Cd x S (0.1 â¤ x â¤ 0.5) were prepared by using pulsed laser ablation technique on corning glass substrates. Phase transition from cubic to hexagonal in Zn1âx Cd x S films is determined by X-ray diffraction analysis. We observed a lowering in the phase transition temperature with increase in the cadmium concentration. Transmission electron microscopy suggests the crystalline nature of thin films with average particle size of 15 nm. The grown Zn1âx Cd x S samples show the high peak intensity ratio of the near band edge emission to the defect center luminescence even at room temperature, which indicates the small concentration of complex defects in the samples. Photoluminescence measurement show stoichiometric dependence of the energy band gap and is found to have quadratic dependence on x.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||13 May 2010 12:53|
|Last Modified:||13 May 2010 13:19|
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