Boubaker, Karem (2009) A comparative study of thermal properties of similar Zn-free and Zn-doped thin films. Current Applied Physics, 9 (6). 1296 - 1299.
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Official URL: http://www.sciencedirect.com/science/article/B6W7T...
Abstract
Zn-doped sprayed thin films have been grown on binary In2S3 substrates under the mean temperature (Td = 320 °C). Further studies Amlouk et al. [M. Amlouk, M.A. Ben Said, N. Kamoun, S. Belgacem, N. Brunet, D. Barjon, Japan Journal of Applied Physics 38 (1999) 26-30]; Lazzez et al. [S. Lazzez, K. Boubaker, M. Amlouk, Indirect measurement of Zn-doped In2S3 NANO films SPECIFIC heat capacity, International Journal of Nanoscience 7 (2008) 1–5.]; Lazzez et al. [S. Lazzez, K. Boubaker, T. Ben Nasrallah, M. Mnari, R. Chtourou, M. Amlouk, S. Belgacem, Structural and optoelectronic properties of InZnS sprayed layers, Acta Physica Polonica A 114 (2008) 869–880.] investigated the band gap shift, the structural and morphological changes induced by this doping. In this study, a quantitative comparative evaluation of the thermal properties of the as-grown layers is carried out. The obtained results, parallel to further information, plea for the superior thermal efficiency of the recently proposed Zn-doped ternary compounds.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Zn-doped thin films; In2S3; Thermal properties; Ternary compounds |
| Subjects: | Material Science > Nanostructured materials |
| ID Code: | 8987 |
| Deposited By: | SPI |
| Deposited On: | 04 May 2010 16:28 |
| Last Modified: | 04 May 2010 16:28 |
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