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1H-1,2,3-triazole, a promising precursor for chemical vapor deposition of hydrogenated carbon nitride

Uddin, Md. Nizam and Siddiquey, Iqbal Ahmed and Islam, Md. Jahurul and Fouad, Osama A. and Nagano, Masamitsu (2009) 1H-1,2,3-triazole, a promising precursor for chemical vapor deposition of hydrogenated carbon nitride. Journal of Crystal Growth, 311 (13). 3528 - 3532.

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Well-crystallized hydrogenated carbon nitride thin films have been prepared by microwave plasma enhanced chemical vapor deposition (MWPECVD). 1H-1,2,3-triazole+N2 and Si (1 0 0) were used as precursor and substrate, respectively. Substrate temperature during the deposition was recorded to be 850 °C. The synthesized samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photo-electron spectroscopy (XPS) analyses. The plasma compositions were checked by optical emission spectroscopy (OES). XRD observation strongly suggests that the films contain polycrystalline carbon nitride with graphitic structure of (1 0 0), (0 0 2), (2 0 0) and (0 0 4). XPS peak quantification reveals that the atomic ratio of the materials C:N:O:Si is 32:41:18:9. X-ray photo-electron peak deconvolution shows that the most dominant peak of C (1s) and N (1s) narrow scans correspond to sp2 hybrid structure of C3N4. These observations indicate that 1H-1,2,3-triazole favors the formation of hydrogenated carbon nitride with graphitic phase by CVD method and thus is in good agreement with XRD results. SEM of surface and OES of plasma also support the formation of polycrystalline carbon nitride films from 1H-1,2,3-triazole+N2 by CVD.

Item Type:Article
Uncontrolled Keywords:A1. Surfaces; A1. X-ray diffraction; A3. Chemical vapor deposition processes; B1. Nitrides
Subjects:Material Science > Nanofabrication processes and tools
ID Code:8973
Deposited By:SPI
Deposited On:03 May 2010 16:24
Last Modified:03 May 2010 16:24

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