Farag, A. A. M. and Yahia, I. S. and Fadel, M (2009) Electrical and photovoltaic characteristics of Al/n-CdS Schottky diode. International Journal of Hydrogen Energy, 34 (11). 4906 - 4913.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://www.sciencedirect.com/science/article/B6V3F...
In this work, we have investigated the structure of the thermally evaporated CdS thin films. The electrical characteristics, such as capacitance–voltage CV and current–voltage IV measurements, of identically prepared Al/n-CdS structure were studied. The values of barrier height and ionized trap like-donors concentration were obtained from the reverse bias capacitance–voltage CV measurements at 1 MHz under different temperatures in the range 303–403 K. The effect of different illumination intensities were also investigated. Current–voltage IV measurement indicates two conduction mechanisms: a conduction limited by thermionic emission TE at lower forward voltages and space charge limited conduction SCLC regime at higher forward voltages. A qualitative description of IV characteristics under different illumination intensities was done. The reverse biased IV measurement under illumination exhibited a high photosensitivity as compared to the forward one. The former was explained in terms of minority carrier injection phenomenon. The photovoltaic parameters, such as open circuit voltage and short circuit current, were obtained.
|Additional Information:||2nd International Workshop on Hydrogen, 2nd International Workshop on Hydrogen|
|Uncontrolled Keywords:||II–VI compound; CdS thin film; Thermal evaporation; IV and CV characteristics; Temperature effect; Illumination effect|
|Subjects:||Technology > Nanotechnology and energy applications|
|Deposited On:||03 May 2010 11:33|
|Last Modified:||03 May 2010 11:33|
Repository Staff Only: item control page