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Residual Stress Relaxation Induced by Mass Transport Through Interface of the Pd/SrTiO3

Nazarpour, S. and Afshar, F. and Zamani, C. and Moghimian, N. and Cirera, A. (2010) Residual Stress Relaxation Induced by Mass Transport Through Interface of the Pd/SrTiO3. Nanoscale Research Letters, 5 (4). pp. 709-713.

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Metal interconnections having a small cross-section and short length can be subjected to very large mass transport due to the passing of high current densities. As a result, nonlinear diffusion and electromigration effects which may result in device failure and electrical instabilities may be manifested. Various thicknesses of Pd were deposited over SrTiO3 substrate. Residual stress of the deposited film was evaluated by measuring the variation of d-spacing versus sin2ψ through conventional X-ray diffraction method. It has been found that the lattice misfit within film and substrate might be relaxed because of mass transport. Besides, the relation between residual intrinsic stress and oxygen diffusion through deposited film has been expressed. Consequently, appearance of oxide intermediate layer may adjust interfacial characteristics and suppress electrical conductivity by increasing electron scattering through metallic films.

Item Type:Article
Uncontrolled Keywords:Mass transport - Residual stress - Interfacial properties - Relaxation process
Subjects:Physical Science > Nanophysics
Material Science > Functional and hybrid materials
Material Science > Nanostructured materials
ID Code:8835
Deposited By:IoN
Deposited On:14 May 2010 15:49
Last Modified:14 May 2010 15:49

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