Heyn, Ch. and Stemmann, A. and KÃ¶ppen, T. and Strelow, Ch. and Kipp, T. and Grave, M. and Mendach, S. and Hansen, W. (2010) Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes. NANOSCALE RESEARCH LETTERS, 5 (3). pp. 576-580. ISSN 1931-7573 (Print) 1556-276X (Online)
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Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.
|Subjects:||Material Science > Nanofabrication processes and tools|
Material Science > Nanochemistry
|Deposited By:||M T V|
|Deposited On:||20 Apr 2010 15:56|
|Last Modified:||20 Apr 2010 15:56|
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