Kpetsu, Jean-Baptiste A. and Jedrzejowski, Pawel and Côté, Claude and Sarkissian, Andranik and Mérel, Philippe and Laou, Philips and Paradis, Suzanne and Désilets, Sylvain and Liu, Hao and Sun, Xueliang (2010) Influence of Ni Catalyst Layer and TiN Diffusion Barrier on Carbon Nanotube Growth Rate. NANOSCALE RESEARCH LETTERS, 5 (3). pp. 539-544. ISSN 1931-7573 (Print) 1556-276X (Online)
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Dense, vertically aligned multiwall carbon nanotubes were synthesized on TiN electrode layers for infrared sensing applications. Microwave plasma-enhanced chemical vapor deposition and Ni catalyst were used for the nanotubes synthesis. The resultant nanotubes were characterized by SEM, AFM, and TEM. Since the length of the nanotubes influences sensor characteristics, we study in details the effects of changing Ni and TiN thickness on the physical properties of the nanotubes. In this paper, we report the observation of a threshold Ni thickness of about 4 nm, when the average CNT growth rate switches from an increasing to a decreasing function of increasing Ni thickness, for a process temperature of 700°C. This behavior is likely related to a transition in the growth mode from a predominantly “base growth” to that of a “tip growth.” For Ni layer greater than 9 nm the growth rate, as well as the CNT diameter, variations become insignificant. We have also observed that a TiN barrier layer appears to favor the growth of thinner CNTs compared to a SiO2 layer.
|Subjects:||Material Science > Nanofabrication processes and tools|
Material Science > Nanochemistry
|Deposited By:||M T V|
|Deposited On:||21 Apr 2010 15:35|
|Last Modified:||14 May 2010 15:28|
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