Dayeh, Shadi A. and Soci, Cesare and Bao, Xin-Yu and Wang, Deli (2009) Advances in the synthesis of InAs and GaAs nanowires for electronic applications. Nano Today, 4 (4). 347 - 358.
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Official URL: http://www.sciencedirect.com/science/article/B82X8...
New materials and device concepts are in great demand for continual (opto)electronic device scaling and performance enhancement. Arsenide III-V semiconductor nanowires promise novel device architectures and superior (opto)electronic properties. Recent insights into the growth and optimal control over the InAs and GaAs nanowire morphology and distinguished key physical aspects in their growth are discussed. Direct correlation of individual nanowire crystal structure with their electronic transport properties is also presented.
|Uncontrolled Keywords:||Nanowire; III–V; Electronics; Optoelectronics|
|Subjects:||Engineering > Nanotechnology applications in ICT|
|Deposited On:||22 Apr 2010 10:48|
|Last Modified:||22 Apr 2010 10:48|
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