Abidi, A. El and Nafidi, A. and Chaib, H. and Kaaouachi, A. El and Braigue, M. and Morghi, R. and Yakoubi, E.Y. EL and d’Astuto, M. (2010) Application of the transition semiconductor semimetal in modulated nanostructures for communication as infrared optoelectronic device. Physica B: Condensed Matter, 405 (3). 936 - 940.
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Official URL: http://www.sciencedirect.com/science/article/B6TVH...
We report here electronic properties of a two-dimensional modulated superlattice nanostructure. Our sample, grown by MBE, had a period d=d1+d2 (90 layers) of d1=5.6 nm (HgTe)/d2=3 nm (CdTe). Calculations of the specters of energy E(d2), E(kz) and E(kp), respectively, in the direction of growth and in plane of the superlattice; were performed in the envelope function formalism. The energy E (d2, Γ, 4.2 K,), shown that for each d1/d2, when d2 increase the gap Eg decrease to zero at the transition semiconductor to semimetal conductivity behavior and become negative accusing a semimetallic conduction. At 4.2 K, the sample exhibits p type conductivity with a Hall mobility of 8200 cm2/Vs. This allowed us to observe the Shubnikov-de Haas effect with p=1.80×1012 cm−2. Using the calculated effective mass of the degenerated heavy holes gas, the Fermi energy (2D) was EF=14 meV in agreement with 12 meV of thermoelectric power α. In intrinsic regime, αT−3/2 and RH T3/2 indicates a gap Eg=E1−HH1=190 meV in agreement with calculated Eg (Γ, 300 K)=178 meV. The formalism used here predicts that this sample is a narrow gap, two-dimensional modulated nanostructure and medium-infrared detector.
|Uncontrolled Keywords:||Band structure; Envelope function formalism; Magneto-transport measurements; Narrow gap nano-semiconductor; Two-dimensional electronic system; Medium-infrared detector HgTe/CdTe superlattices|
|Subjects:||Engineering > Nanotechnology applications in ICT|
|Deposited On:||22 Apr 2010 10:39|
|Last Modified:||22 Apr 2010 10:39|
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