Nano Archive

Computational model of edge effects in graphene nanoribbon transistors

Zhao, Pei and Choudhury, Mihir and Mohanram, Kartik and Guo, Jing (2008) Computational model of edge effects in graphene nanoribbon transistors. Nano Research, 1 (5). pp. 395-402. ISSN 1998-0124 (Print) 1998-0000 (Online)

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Official URL: http://www.springerlink.com/content/l5105g779445j5...

Abstract

We present a semi-analytical model incorporating the effects of edge bond relaxation, the third nearest neighbor interactions, and edge scattering in graphene nanoribbon field-effect transistors (GNRFETs) with armchair-edge GNR (AGNR) channels. Unlike carbon nanotubes (CNTs) which do not have edges, the existence of edges in the AGNRs has a significant effect on the quantum capacitance and ballistic I-V characteristics of GNRFETs. For an AGNR with an index of m=3p, the band gap decreases and the ON current increases whereas for an AGNR with an index of m=3p+1, the quantum capacitance increases and the ON current decreases. The effect of edge scattering, which reduces the ON current, is also included in the model.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:8414
Deposited By:JNCASR
Deposited On:23 Mar 2010 04:44
Last Modified:23 Mar 2010 04:44

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