Zhao, Pei and Choudhury, Mihir and Mohanram, Kartik and Guo, Jing (2008) Computational model of edge effects in graphene nanoribbon transistors. Nano Research, 1 (5). pp. 395-402. ISSN 1998-0124 (Print) 1998-0000 (Online)
Official URL: http://www.springerlink.com/content/l5105g779445j5...
We present a semi-analytical model incorporating the effects of edge bond relaxation, the third nearest neighbor interactions, and edge scattering in graphene nanoribbon field-effect transistors (GNRFETs) with armchair-edge GNR (AGNR) channels. Unlike carbon nanotubes (CNTs) which do not have edges, the existence of edges in the AGNRs has a significant effect on the quantum capacitance and ballistic I-V characteristics of GNRFETs. For an AGNR with an index of m=3p, the band gap decreases and the ON current increases whereas for an AGNR with an index of m=3p+1, the quantum capacitance increases and the ON current decreases. The effect of edge scattering, which reduces the ON current, is also included in the model.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||23 Mar 2010 04:44|
|Last Modified:||23 Mar 2010 04:44|
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