Han, Xiaobing and Jing, Guangyin and Zhang, Xinzheng and Ma, Renmin and Song, Xuefeng and Xu, Jun and Liao, Zhimin and Wang, Ning and Yu, Dapeng (2009) Bending-induced conductance increase in individual semiconductor nanowires and nanobelts. Nano Research, 2 (7). pp. 553-557. ISSN 1998-0124 (Print) 1998-0000 (Online)
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Official URL: http://www.springerlink.com/content/k1534378616170...
Abstract
Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts. Significant conductance increases of up to 113% were observed on bending individual ZnO nanowires or CdS nanobelts. This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements, such as using different manipulating tips (silicon, glass or tungsten) to bend the nanowires or nanobelts, and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanophysics Physical Science > Nano objects Material Science > Nanochemistry Material Science > Nanostructured materials |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics Faculty of Engineering, Science and Mathematics > School of Chemistry |
| ID Code: | 8363 |
| Deposited By: | JNCASR |
| Deposited On: | 01 May 2010 10:40 |
| Last Modified: | 01 May 2010 10:40 |
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