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Bending-induced conductance increase in individual semiconductor nanowires and nanobelts

Han, Xiaobing and Jing, Guangyin and Zhang, Xinzheng and Ma, Renmin and Song, Xuefeng and Xu, Jun and Liao, Zhimin and Wang, Ning and Yu, Dapeng (2009) Bending-induced conductance increase in individual semiconductor nanowires and nanobelts. Nano Research, 2 (7). pp. 553-557. ISSN 1998-0124 (Print) 1998-0000 (Online)

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Official URL: http://www.springerlink.com/content/k1534378616170...

Abstract

Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts. Significant conductance increases of up to 113% were observed on bending individual ZnO nanowires or CdS nanobelts. This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements, such as using different manipulating tips (silicon, glass or tungsten) to bend the nanowires or nanobelts, and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:8363
Deposited By:JNCASR
Deposited On:01 May 2010 10:40
Last Modified:01 May 2010 10:40

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