Han, Xiaobing and Jing, Guangyin and Zhang, Xinzheng and Ma, Renmin and Song, Xuefeng and Xu, Jun and Liao, Zhimin and Wang, Ning and Yu, Dapeng (2009) Bending-induced conductance increase in individual semiconductor nanowires and nanobelts. Nano Research, 2 (7). pp. 553-557. ISSN 1998-0124 (Print) 1998-0000 (Online)
Official URL: http://www.springerlink.com/content/k1534378616170...
Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts. Significant conductance increases of up to 113% were observed on bending individual ZnO nanowires or CdS nanobelts. This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements, such as using different manipulating tips (silicon, glass or tungsten) to bend the nanowires or nanobelts, and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||01 May 2010 10:40|
|Last Modified:||01 May 2010 10:40|
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