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Kinetically-induced hexagonality in chemically grown silicon nanowires

Liu, Xiaohua and Wang, Dunwei (2009) Kinetically-induced hexagonality in chemically grown silicon nanowires. Nano Research, 2 (7). pp. 575-582. ISSN 1998-0124 (Print) 1998-0000 (Online)

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Official URL: http://www.springerlink.com/content/m736421jh5t262...

Abstract

Various silicon crystal structures with different atomic arrangements from that of diamond have been observed in chemically synthesized nanowires. The structures are typified by mixed stacking mismatches of closely packed Si dimers. Instead of viewing them as defects, we define the concept of hexagonality and describe these structures as Si polymorphs. The small transverse dimensions of a nanowire make this approach meaningful. Unique among the polymorphs are cubic symmetry diamond and hexagonal symmetry wurtzite structures. Electron diffraction studies conducted with Au as an internal reference unambiguously confirm the existence of the hexagonal symmetry Si nanowires.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:8360
Deposited By:JNCASR
Deposited On:01 May 2010 10:40
Last Modified:01 May 2010 10:40

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