Ouyang, Yijian and Dai, Hongjie and Guo, Jing (2010) Projected performance advantage of multilayer graphene nanoribbons as a transistor channel material. Nano Research, 3 (1). pp. 8-15.
Official URL: http://docs.google.com/viewer?a=v&q=cache:rIvIISzs...
The performance limits of a multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared with those of a monolayer GNRFET and a carbon nanotube (CNT) FET. The results show that with a thin high dielectric constant (high-Îº) gate insulator and reduced interlayer coupling, a multilayer GNRFET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. Simulation results indicate that multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidates for high-performance GNRFETs.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||01 May 2010 11:01|
|Last Modified:||01 May 2010 11:01|
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