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Growth study of thin indium nitride layers on InP (1 0 0) by Auger electron spectroscopy and photoluminescence

Khalifa, S. Ben and Saidi, F and Gruzza, B and Robert-Goumet, C and Bideux, L and Hassen, F and Maaref, H (2009) Growth study of thin indium nitride layers on InP (1 0 0) by Auger electron spectroscopy and photoluminescence. Journal of Crystal Growth, 311 (9). 2608 - 2614.

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This article investigates the growth of InN layers on (1 0 0) InP in ultra-high vacuum using a glow discharge source (GDS). Auger electron spectroscopy (AES) was used to understand the different steps of the nitridation process with the analysis of In-MNN, N-KLL and P-LMM transitions. A modeling of Auger signals using a stacked layers model allows us to confirm that four monolayers of indium nitride are created on (1 0 0) InP. InN layers grown on (1 0 0) InP were studied optically by photoluminescence (PL) spectroscopy versus the excitation power and the sample temperature (10–300 K). Results show broad spectral band energy close to the lowest reported InN bandgap. The temperature dependence of the PL peak energy showed a S-shaped behavior (decrease–increase–decrease). The results suggest that the InN-related emission is significantly affected by the change in carrier dynamics with increasing temperature: the effect can be due to the large exciton localization effects.

Item Type:Article
Uncontrolled Keywords:A1. Photoluminescence; A1. Surface; B1. InN
Subjects:Physical Science > Quantum phenomena
ID Code:8293
Deposited By:SPI
Deposited On:22 Feb 2010 16:31
Last Modified:22 Feb 2010 16:31

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