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Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates

Lee, J. H. and Wang, Zh. M. and Kim, E. S. and Kim, N. Y. and Park, S. H. and Salamo, G. J. (2009) Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates. Nanoscale Research Letters, 5 (2). pp. 308-314.

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We report on various self-assembled In(Ga)As nanostructures by droplet epitaxy on GaAs substrates using molecular beam epitaxy. Depending on the growth condition and index of surfaces, various nanostructures can be fabricated: quantum dots (QDs), ring-like and holed-triangular nanostructures. At near room temperatures, by limiting surface diffusion of adatoms, the size of In droplets suitable for quantum confinement can be fabricated and thus InAs QDs are demonstrated on GaAs (100) surface. On the other hand, at relatively higher substrate temperatures, by enhancing the surface migrations of In adatoms, super lower density of InGaAs ring-shaped nanostructures can be fabricated on GaAs (100). Under an identical growth condition, holed-triangular InGaAs nanostructures can be fabricated on GaAs type-A surfaces, while ring-shaped nanostructures are formed on GaAs (100). The formation mechanism of various nanostructures can be understood in terms of intermixing, surface diffusion, and surface reconstruction.

Item Type:Article
Uncontrolled Keywords:Droplet epitaxy - Nanostructures - High-index GaAs - Atomic force microscope - Molecular beam epitaxy
Subjects:Material Science > Nanofabrication processes and tools
Material Science > Nanostructured materials
ID Code:8163
Deposited By:Lesley Tobin
Deposited On:12 Feb 2010 12:43
Last Modified:12 Feb 2010 12:43

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