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Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

Cirlin, G. E. and Bouravleuv, A. D. and Soshnikov, I. P. and Samsonenko, Yu. B. and Dubrovskii, V. G. and Arakcheeva, E. M. and Tanklevskaya, E. M. and Werner, P. (2009) Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate. Nanoscale Research Letters, 5 (2). pp. 360-363.

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Official URL: http://www.springerlink.com/content/4687h04q51l756...

Abstract

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.

Item Type:Article
Uncontrolled Keywords:Molecular beam epitaxy - Nanowires - GaAs - Solar cells - Photovoltaic properties
Subjects:Material Science > Nanofabrication processes and tools
Technology > Nanotechnology and energy applications
Material Science > Nanostructured materials
ID Code:8156
Deposited By:Lesley Tobin
Deposited On:17 Feb 2010 16:29
Last Modified:17 Feb 2010 16:29

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