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Study on Resistance Switching Properties of Na0.5Bi0.5TiO3 Thin Films Using Impedance Spectroscopy

Zhang, Ting and Zhang, Xinan and Ding, Linghong and Zhang, Weifeng (2009) Study on Resistance Switching Properties of Na0.5Bi0.5TiO3 Thin Films Using Impedance Spectroscopy. Nanoscale Research Letters, 4 (11). pp. 1309-1314.

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Official URL: http://www.springerlink.com/content/u81221vl836467...

Abstract

The Na0.5Bi0.5TiO3 (NBT) thin films sandwiched between Au electrodes and fluorine-doped tin oxide (FTO) conducting glass were deposited using a sol–gel method. Based on electrochemical workstation measurements, reproducible resistance switching characteristics and negative differential resistances were obtained at room temperature. A local impedance spectroscopy measurement of Au/NBT was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the Au/NBT/FTO device. It was proposed that the first and the second ionization of oxygen vacancies are responsible for the conduction in the low- and high-resistance states, respectively. The experimental results showed high potential for nonvolatile memory applications in NBT thin films.

Item Type:Article
Uncontrolled Keywords:Na0.5Bi0.5TiO3 (NBT) thin films - Resistance switching - Impedance spectroscopy - Interfacial characteristics - Oxygen vacancies
Subjects:Physical Science > Nanophysics
Analytical Science > Microscopy and probe methods
Material Science > Nanostructured materials
Engineering > Nanotechnology applications in ICT
ID Code:7938
Deposited By:IoN
Deposited On:12 Jan 2010 11:09
Last Modified:12 Jan 2010 11:09

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