Zhang, Ting and Zhang, Xinan and Ding, Linghong and Zhang, Weifeng (2009) Study on Resistance Switching Properties of Na0.5Bi0.5TiO3 Thin Films Using Impedance Spectroscopy. Nanoscale Research Letters, 4 (11). pp. 1309-1314.
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Official URL: http://www.springerlink.com/content/u81221vl836467...
Abstract
The Na0.5Bi0.5TiO3 (NBT) thin films sandwiched between Au electrodes and fluorine-doped tin oxide (FTO) conducting glass were deposited using a sol–gel method. Based on electrochemical workstation measurements, reproducible resistance switching characteristics and negative differential resistances were obtained at room temperature. A local impedance spectroscopy measurement of Au/NBT was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the Au/NBT/FTO device. It was proposed that the first and the second ionization of oxygen vacancies are responsible for the conduction in the low- and high-resistance states, respectively. The experimental results showed high potential for nonvolatile memory applications in NBT thin films.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Na0.5Bi0.5TiO3 (NBT) thin films - Resistance switching - Impedance spectroscopy - Interfacial characteristics - Oxygen vacancies |
| Subjects: | Physical Science > Nanophysics Analytical Science > Microscopy and probe methods Material Science > Nanostructured materials Engineering > Nanotechnology applications in ICT |
| ID Code: | 7938 |
| Deposited By: | IoN |
| Deposited On: | 12 Jan 2010 11:09 |
| Last Modified: | 12 Jan 2010 11:09 |
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