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Photoelectric Properties of Silicon Nanocrystals/P3HT Bulk-Heterojunction Ordered in Titanium Dioxide Nanotube Arrays

Švrček, Vladimir and Turkevych, Ivan and Kondo, Michio (2009) Photoelectric Properties of Silicon Nanocrystals/P3HT Bulk-Heterojunction Ordered in Titanium Dioxide Nanotube Arrays. Nanoscale Research Letters, 4 (11). pp. 1389-1394.

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Official URL: http://www.springerlink.com/content/t1145hu7563h13...

Abstract

A silicon nanocrystals (Si-ncs) conjugated-polymer-based bulk-heterojunction represents a promising approach for low-cost hybrid solar cells. In this contribution, the bulk-heterojunction is based on Si-ncs prepared by electrochemical etching and poly(3-hexylthiophene) (P3HT) polymer. Photoelectric properties in parallel and vertical device-like configuration were investigated. Electronic interaction between the polymer and surfactant-free Si-ncs is achieved. Temperature-dependent photoluminescence and transport properties were studied and the ratio between the photo- and dark-conductivity of 1.7 was achieved at ambient conditions. Furthermore the porous titanium dioxide (TiO2) nanotubes’ template was used for vertical order of photosensitive Si-ncs/P3HT-based blend. The anodization of titanium foil in ethylene glycol-based electrolyte containing fluoride ions and subsequent thermal annealing were used to prepare anatase TiO2 nanotube arrays. The arrays with nanotube inner diameter of 90 and 50 nm were used for vertical ordering of the Si-ncs/P3HT bulk-heterojunction.

Item Type:Article
Uncontrolled Keywords:Silicon nanocrystals - Bulk heterojunction - Titanium dioxide nanotubes
Subjects:Material Science > Nanostructured materials
Physical Science > Photonics
ID Code:7925
Deposited By:IoN
Deposited On:13 Jan 2010 11:44
Last Modified:13 Jan 2010 11:44

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