Cai, Weiwei and Piner, Richard D. and Zhu, Yanwu and Li, Xuesong and Tan, Zhenbing and Floresca, Herman Carlo and Yang, Changli and Lu, Li and Kim, M. J. and Ruoff, Rodney S. (2009) Synthesis of isotopically-labeled graphite films by cold-wall chemical vapor deposition and electronic properties of graphene obtained from such films. Nano Research, 2 (11). pp. 851-856. ISSN 1998-0124 (print version) ISSN: 1998-0000 (electronic version)
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We report the synthesis of isotopically-labeled graphite films on nickel substrates by using cold-wall chemical vapor deposition (CVD). During the synthesis, carbon from 12C- and 13C-methane was deposited on, and dissolved in, a nickel foil at high temperature, and a uniform graphite film was segregated from the nickel surface by cooling the sample to room temperature. Scanning and transmission electron microscopy, micro-Raman spectroscopy, and X-ray diffraction prove the presence of a graphite film. Monolayer graphene films obtained from such isotopically-labeled graphite films by mechanical methods have electron mobility values greater than 5000 cm2Â·Vâ1Â·sâ1 at low temperatures. Furthermore, such films exhibit the half-integer quantum Hall effect over a wide temperature range from 2 K to 200 K, implying that the graphite grown by this cold-wall CVD approach has a quality as high as highly oriented pyrolytic graphite (HOPG). The results from transport measurements indicate that 13C-labeling does not significantly affect the electrical transport properties of graphene.
|Subjects:||Material Science > Nanofabrication processes and tools|
Physical Science > Nanoelectronics
|Deposited By:||M T V|
|Deposited On:||30 Nov 2009 16:17|
|Last Modified:||30 Nov 2009 16:17|
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