Behnam, A. and Haji, S. and Karbassian, F. and Mohajerzadeh, S. and Ebrahimi, A. and Abdi, Y. and Robertson, M. D. (2007) Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006, 910 . pp. 441-446. ISSN 0272-9172
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Abstract
The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 degrees C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm(2)/Vs.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanophysics Physical Science > Nano objects Material Science > Nanochemistry Material Science > Nanostructured materials |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics Faculty of Engineering, Science and Mathematics > School of Chemistry |
| ID Code: | 7754 |
| Deposited By: | JNCASR |
| Deposited On: | 16 Nov 2009 10:28 |
| Last Modified: | 16 Nov 2009 10:28 |
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