Nano Archive

Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique

Behnam, A. and Haji, S. and Karbassian, F. and Mohajerzadeh, S. and Ebrahimi, A. and Abdi, Y. and Robertson, M. D. (2007) Nano-crystalline silicon thin film transistors on PET substrates using a hydrogenation-assisted metal-induced crystallization technique. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006, 910 . pp. 441-446. ISSN 0272-9172

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Abstract

The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 degrees C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm(2)/Vs.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:7754
Deposited By:JNCASR
Deposited On:16 Nov 2009 10:28
Last Modified:16 Nov 2009 10:28

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