Mordvintsev, V. and Kudryavtsev, S. and Levin, V. (2009) High-stable nonvolatile electrically reprogrammable memory on self-formed conducting nanostructures. Nanotechnologies in Russia, 4 . pp. 129-136.
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Official URL: http://dx.doi.org/10.1134/S1995078009010145
Abstract
The results of designing, fabricating, and testing experimental samples of memory matrices whose memory element is based on self-formed conducting nanostructures created in electroformed open ``sandwich`` structures Si- SiO2-W are given. A possible practical usage of such memory is shown. The unique combination of its consumer properties, e.g., high operating speed, thermal stability, radiation resistance, and potentially high-density data recording, is demonstrated. The possibility of manufacturing the memory matrices by standard silicon technology is shown as well.
| Item Type: | Article |
|---|---|
| Additional Information: | 10.1134/S1995078009010145 |
| ID Code: | 7610 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 11 Nov 2009 07:54 |
| Last Modified: | 11 Nov 2009 08:00 |
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