Shvets, V. and Spesivtsev, E. and Rykhlitskii, S. and Mikhailov, N. (2009) Ellipsometry as a high-precision technique for subnanometer-resolved monitoring of thin-film structures. Nanotechnologies in Russia, 4 . pp. 201-214.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://dx.doi.org/10.1134/S1995078009030082
The prospects for using optical ellipsometry in advanced nanotechnologies and scientific experiments are discussed. The most important feature of the technique is that there is no perturbing influence on the system to be studied. In combination with its high sensitivity, this feature makes the technique attractive for a number of uses in different fields of knowledge, such as the physics of semiconductors, the physics and chemistry of surfaces, material science, chemistry, biology, etc. A number of modern models of ellipsometers engineered and produced at the Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, are presented. These instruments are based on the new patented static arrangement for ellipsometric measurements. The potential of the instruments is demonstrated by the examples of ellipsometric studies aimed at solving a number of scientific problems and by the example of applying ellipsometry to the technology of growing photosensitive Cd x Hg1 − x Te semiconductor heterostructures.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||11 Nov 2009 07:53|
|Last Modified:||11 Nov 2009 08:00|
Repository Staff Only: item control page