Mordvintsev, V. and Kudryavtsev, S. and Levin, V. (2009) Electroforming as a process in the self-formation of conducting nanostructures for the nonvolatile electrically reprogrammable memory elements. Nanotechnologies in Russia, 4 . pp. 121-128.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://dx.doi.org/10.1134/S1995078009010133
The physical grounds of electroformation as a process in the self-formation (self-organization) of a nanometer-sized insulating gap in a conducting medium are considered; this process takes place on an open insulator surface when an electric current passes. The proposed physical concepts permit the explanation of all main features of the electroforming process and the properties of electroformed metal-insulator-metal (MIM) structures, such as N-shaped current-voltage characteristics, the bistability, the memory effect, the existence of the threshold voltage of switching from a low- to a high-conducting state, etc. The notations developed allow one to substantially formulate a concept of a new nanoelectronics device-a nano-MIM diode-with an active conducting medium, which may be a base for the nonvolatile electrically reprogrammable memory cell.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||11 Nov 2009 07:54|
|Last Modified:||11 Nov 2009 08:00|
Repository Staff Only: item control page