V.M., Borisevich and A.A., Kovaltvskii and D.V., Plyakin and A.S, Strogova (2009) Study of Highly Ordered Germanium Nano-cluster's Self-Organization in the Process of Polycrystalline Silicon Doped by Germanium Films Deposition. Journal of NANO and MICROSYSTEM TECHNIQUE (4).
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Using methods of atomic-forced microscopy and combination scattering of light by optical phonons in germanium clusters the characteristic features of formation of self-organized germanium (Ge) clusters and solid solution SiGe first formed in the regime of deposition of subfine polycrystalline films of silicon doped by Ge on nanosized dielectrics' films are studied. Interrelation of form, size and density of nanoclusters' (NC) of Ge with conditions of their self-organization is investigated. The influence on the process of self-organization of clusters of interdiffusive processes significant at high temperatures of deposition and doping of polycrystalline silicon (PCS) is determined. The principal possibility to manage the geometric parameters of self-organizing NS (nanoislets) by choosing conditions of their self-organization is shown.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||11 Nov 2009 07:52|
|Last Modified:||11 Nov 2009 08:00|
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