I.I., Abramov and I.A., Goncharenko and N.V., Kolomejtseva (2009) Simulation of Resonant Tunneling Diodes Based on GaAs/AlAs with the Use of Combined Two-Band Model. Journal of NANO and MICROSYSTEM TECHNIQUE (3).
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The analysis of problems of agreement of current-voltage characteristics calculation results of RTD based on known models with the experimental data has led to a conclusion about necessity of development of model for particular system (systems) of materials. It is shown, that the proposed combined two-band model can be used for the satisfactory agreement with experimental data on I-V characteristics RTD based on GaAs/AlAs.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||11 Nov 2009 07:52|
|Last Modified:||11 Nov 2009 08:00|
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