Nano Archive

Simulation of Resonant Tunneling Diodes Based on GaAs/AlAs with the Use of Combined Two-Band Model

I.I., Abramov and I.A., Goncharenko and N.V., Kolomejtseva (2009) Simulation of Resonant Tunneling Diodes Based on GaAs/AlAs with the Use of Combined Two-Band Model. Journal of NANO and MICROSYSTEM TECHNIQUE (3).

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Official URL: http:// www.microsystems.ru

Abstract

The analysis of problems of agreement of current-voltage characteristics calculation results of RTD based on known models with the experimental data has led to a conclusion about necessity of development of model for particular system (systems) of materials. It is shown, that the proposed combined two-band model can be used for the satisfactory agreement with experimental data on I-V characteristics RTD based on GaAs/AlAs.

Item Type:Article
ID Code:7531
Deposited By:Prof. Alexey Ivanov
Deposited On:11 Nov 2009 07:52
Last Modified:11 Nov 2009 08:00

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