I.I., Abramov and I.A., Goncharenko and N.V., Kolomejtseva (2009) Simulation of Resonant Tunneling Diodes Based on GaAs/AlAs with the Use of Combined Two-Band Model. Journal of NANO and MICROSYSTEM TECHNIQUE (3).
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http:// www.microsystems.ru
Abstract
The analysis of problems of agreement of current-voltage characteristics calculation results of RTD based on known models with the experimental data has led to a conclusion about necessity of development of model for particular system (systems) of materials. It is shown, that the proposed combined two-band model can be used for the satisfactory agreement with experimental data on I-V characteristics RTD based on GaAs/AlAs.
| Item Type: | Article |
|---|---|
| ID Code: | 7531 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 11 Nov 2009 07:52 |
| Last Modified: | 11 Nov 2009 08:00 |
Repository Staff Only: item control page
