A.G., Mustafaev and G.A., Mustafaev (2009) Process of Deep Trench Isolation for Silicon on Insulator Structures. Journal of NANO and MICROSYSTEM TECHNIQUE (1).
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Abstract
Work is comidering deep anisotropic etching of SOI structures. Parameters of trench forming process in ion coupled plasma reactor with LF bias at substrate electrode are given. Breakdown voltage of formed structures is measured.
| Item Type: | Article |
|---|---|
| ID Code: | 7512 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 11 Nov 2009 07:51 |
| Last Modified: | 11 Nov 2009 08:00 |
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