Nano Archive

Process of Deep Trench Isolation for Silicon on Insulator Structures

A.G., Mustafaev and G.A., Mustafaev (2009) Process of Deep Trench Isolation for Silicon on Insulator Structures. Journal of NANO and MICROSYSTEM TECHNIQUE (1).

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Official URL: http:// www.microsystems.ru

Abstract

Work is comidering deep anisotropic etching of SOI structures. Parameters of trench forming process in ion coupled plasma reactor with LF bias at substrate electrode are given. Breakdown voltage of formed structures is measured.

Item Type:Article
ID Code:7512
Deposited By:Prof. Alexey Ivanov
Deposited On:11 Nov 2009 07:51
Last Modified:11 Nov 2009 08:00

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